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2SD1412 - Silicon NPN Power Transistor

General Description

Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) Complement to Type 2SB1019 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applica

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isc Silicon NPN Power Transistor 2SD1412 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·Complement to Type 2SB1019 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications. ·Power amplifier applications.