2SD1412 datasheet by Inchange Semiconductor.
| Part number | 2SD1412 |
|---|---|
| Datasheet | 2SD1412-INCHANGE.pdf |
| File Size | 215.44 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
|
·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·plement to Type 2SB1019 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD1412 | NPN Transistor | Toshiba |
 |
2SD1412A | Silicon NPN Transistor | Toshiba Semiconductor |
View all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD1410 | Silicon NPN Darlington Power Transistor |
| 2SD1411 | NPN Transistor |
| 2SD1413 | NPN Transistor |
| 2SD1414 | NPN Transistor |
| 2SD1415 | NPN Transistor |
| 2SD1415A | NPN Transistor |
| 2SD1416 | Silicon NPN Darlington Power Transistor |
| 2SD1417 | NPN Transistor |
| 2SD1400 | NPN Transistor |
| 2SD1402 | NPN Transistor |
