2SD1415A - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

INCHANGE

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Datasheet Details

Part number	2SD1415A
Manufacturer	INCHANGE
File Size	205.31 KB
Description	NPN Transistor
Datasheet	2SD1415A Datasheet
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isc Silicon NPN Darlington Power Transistor 2SD1415A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.

Published: Sep 21, 2020 |