2SD1415A Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain.
NPN Transistor
| Part number | 2SD1415A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.31 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1415A-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| 2SD1415A | Silicon NPN Transistor | Toshiba Semiconductor | |
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2SD1415A | SILICON POWER TRANSISTOR | SavantIC |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD1415 | NPN Transistor |
| 2SD1410 | Silicon NPN Darlington Power Transistor |
| 2SD1411 | NPN Transistor |
| 2SD1412 | Silicon NPN Power Transistor |
| 2SD1413 | NPN Transistor |
| 2SD1414 | NPN Transistor |
| 2SD1416 | Silicon NPN Darlington Power Transistor |
| 2SD1417 | NPN Transistor |
| 2SD1400 | NPN Transistor |
| 2SD1402 | NPN Transistor |