Part 2SD1415
Description NPN Transistor
Category Transistor
Manufacturer Inchange Semiconductor
Size 210.36 KB
Inchange Semiconductor

2SD1415 Overview

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) - Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A - High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V - Complement to Type 2SB1020 - Minimum Lot-to-Lot variations for robust device performance and reliable operation.