Datasheet Details
| Part number | 2SD1417 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.35 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1417-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor 2SD1417.
| Part number | 2SD1417 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.35 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1417-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 3V, IC= 3A) ·Low Collector Saturation Voltage ·Complement to Type 2SB1022 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ·Hammer drive,pulse motor drive applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.2 A 2 W 30 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A;
IB= 6mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A;
| Part Number | Description |
|---|---|
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| 2SD1415A | NPN Transistor |
| 2SD1416 | Silicon NPN Darlington Power Transistor |
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| 2SD1402 | NPN Transistor |