Datasheet4U Logo Datasheet4U.com

2SD1417 - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) High DC Current Gain- : hFE= 2000(Min)@ (VCE= 3V, IC= 3A) Low Collector Saturation Voltage Complement to Type 2SB1022 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

📥 Download Datasheet

Datasheet preview – 2SD1417

Datasheet Details

Part number 2SD1417
Manufacturer INCHANGE
File Size 208.35 KB
Description NPN Transistor
Datasheet download datasheet 2SD1417 Datasheet
Additional preview pages of the 2SD1417 datasheet.

📁 Similar Datasheet

  • 2SD1410 - NPN Transistor (Toshiba)
  • 2SD1410A - Silicon NPN Transistor (Toshiba Semiconductor)
  • 2SD1411 - NPN Transistor (Toshiba)
  • 2SD1411 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1411A - NPN Transistor (Toshiba Semiconductor)
  • 2SD1412 - NPN Transistor (Toshiba)
  • 2SD1412A - Silicon NPN Transistor (Toshiba Semiconductor)
  • 2SD1414 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1415A - Silicon NPN Transistor (Toshiba Semiconductor)
  • 2SD1415A - SILICON POWER TRANSISTOR (SavantIC)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Darlington Power Transistor 2SD1417 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 3V, IC= 3A) ·Low Collector Saturation Voltage ·Complement to Type 2SB1022 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ·Hammer drive,pulse motor drive applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.
Published: |