| Part number | 2SD1417 |
|---|---|
| Datasheet | 2SD1417-INCHANGE.pdf |
| File Size | 208.35 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain- : 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA.
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD1410 | Silicon NPN Darlington Power Transistor |
| 2SD1411 | NPN Transistor |
| 2SD1412 | Silicon NPN Power Transistor |
| 2SD1413 | NPN Transistor |
| 2SD1414 | NPN Transistor |
| 2SD1415 | NPN Transistor |
| 2SD1415A | NPN Transistor |
| 2SD1416 | Silicon NPN Darlington Power Transistor |
| 2SD1400 | NPN Transistor |
| 2SD1402 | NPN Transistor |
