Datasheet Summary
isc Silicon NPN Darlington Power Transistor
DESCRIPTION
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 250V(Min)
- Collector-Emitter Saturation Voltage-
:V CE(sat)= 2.0V(Max) @IC= 4A
- High DC Current Gain
: hFE= 2000(Min) @ IC= 2A, VCE= 2V
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Igniter applications
- High voltage switching...
