| Part Number | 2SD1410 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | 2SD1410 SILICON NPNTRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES . High DC Current Gain : hFE=2000(Min. ) (Vce=2V, Ic=2A) INDUSTRIAL . . High DC Current Gain : hFE=2000(Min. ) (Vce=2V, Ic=2A) INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. 03.2±Q2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Tem. |
2SD1410 Datasheet and Specifications PDF
The 2SD1410 is a NPN Transistor.
| Part Number | 2SD1410 Datasheet |
|---|---|
| Description | Silicon NPN Darlington Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) ·Collector-Emitter Saturation Voltage- :V CE(sat)= 2.0V(Max) @IC= 4A ·High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V ·Minimum Lot. cified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; L= 40mH VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 40mA ICBO Collector Cutoff Current VCB= 300V; IE= 0 IEBO Emitter Cutoff. |