2SD1411 Overview
Description
With TO-220Fa package - Low saturation voltage - Complementary to 2SB1018 APPLICATIONS - Power amplifier applications - High current switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2.0 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 100 80 5 7 1 30 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA; IB=0 IC=4A ;IB=0.4A IC=4A ;IB=0.4A VCB=100V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=1V IC=4A ; VCE=1V VCE=4V;IC=1A f=1MHz ; VCB=10V;IE=0 70 30 MIN 80 2SD1411 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V 0.25 0.9 0.5 1.4 5 5 240 V V µA µA 10 250 MHz pF Switching times ton tstg tf Turn-on time Storage time Fall time IB1=-IB2=0.3A VCC=30V ,RL=10A 0.4 2.5 0.5 µs µs µs hFE-1 Classifications O 70-140 Y 120-240 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1411 Fig.2 Outline dimensions(unindicated tolerance: ±0.15 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1411 4.
