Part Number	2SD1413 Datasheet
Manufacturer	Inchange Semiconductor
Overview	·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A ·High DC Current Gain : hFE= 2000(Min) @ IC= 1A, VCE= 2V ·Complement to . ACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 40 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 4mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 4mA 2.0 .