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2SD1436 - NPN Transistor

General Description

High DC Current Gain : hFE= 1000(Min.)@ IC= 5A, VCE= 3V Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) Complement to Type 2SB1032 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applica

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.)@ IC= 5A, VCE= 3V ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) ·Complement to Type 2SB1032 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 15 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1436 isc website：www.iscsemi.