Low Collector Saturation Voltage
: VCE(sat)= 0.6V(Max)@ IC= 5A
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 20V (Min)
Complement to Type 2SB956
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for power amplifier ap
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isc Silicon NPN Power Transistor
2SD1444
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 0.6V(Max)@ IC= 5A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 20V (Min) ·Complement to Type 2SB956 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
20
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
Collector Power Dissipation @ Ta=25℃
PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
12
A
2 W
30
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.
2SD1444 Datasheet
