Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max.)@ IC= 4A
High Collector Power Dissipation
Good Linearity of hFE
Wide Area of Safe Operation
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for low frequency
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isc Silicon NPN Power Transistor
2SD1580
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max.)@ IC= 4A ·High Collector Power Dissipation ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Pulse
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
10
A
1.5 W
40
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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2SD1580 Datasheet
