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2SD1619 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 25V (Min) Complement to Type 2SB1119 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for LF Amp Electronic Governor applications.

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1619 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 25V (Min) ·Complement to Type 2SB1119 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for LF Amp Electronic Governor applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature 2 A 0.5 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.