2SD1619 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 25V (Min) ·plement to Type 2SB1119 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for LF Amp Electronic Governor applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1619 TC=25℃ unless otherwise specified SYMBOL PARAMETER...
