2SD1624 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·Fast switching speed ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for LF Amp Electronic Governor applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1624 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS...
