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INCHANGE

2SD1624 Datasheet Preview

2SD1624 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1624
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V (Min)
·Fast switching speed
·100% tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for LF Amp Electronic Governor applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
60
V
VCEO Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@ Tc=25
TJ
Junction Temperature
6
A
0.5
W
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SD1624 Datasheet Preview

2SD1624 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1624
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC=-10uA ,IE=0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10uA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 100mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 100mA
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
VCB= 40V; IE= 0
VEB= 4V; IC= 0
IC= 100mA; VCE= 2V
fT
Current-Gain—Bandwidth Product
IC= 50mA; VCE= 10V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
MIN TYP. MAX UNIT
50
V
60
V
6
V
0.5
V
1.2
V
1.0 μA
1.0 μA
100
560
150
MHz
25
pF
hFE Classifications
R
S
T
U
100-200 140-280 200-400 280-560
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2SD1624
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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2SD1624 Datasheet PDF





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