| Part number | 2SD1651 |
|---|---|
| Datasheet | 2SD1651-INCHANGE.pdf |
| File Size | 210.43 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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·High Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1651 | Silicon NPN Power Transistors | Savantic |
 |
2SD1651C | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
