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2SD1673 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) High DC Current Gain- : hFE= 1000( Min.) @ IC= 7A Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For l

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Datasheet Details

Part number 2SD1673
Manufacturer INCHANGE
File Size 186.03 KB
Description NPN Transistor
Datasheet download datasheet 2SD1673 Datasheet
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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1673 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High DC Current Gain- : hFE= 1000( Min.) @ IC= 7A ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For low speed high current switching industrial use.
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