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Inchange Semiconductor
2SD1673
DESCRIPTION - Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) - High DC Current Gain- : h FE= 1000( Min.) @ IC= 7A - Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - For low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Junction Temperature 3.5...