Collector-Base Breakdown Voltage-
: V(BR)CBO= 330V(Min)
High Power Dissipation
High Speed Switching
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for horizontal deflection output applications.
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isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 330V(Min) ·High Power Dissipation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
330
V
VCES
Collector-Emitter Voltage
330
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
ICP
Collector Current-Pulse
ICP
Collector Current-Pulse (unrepetitive)
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
10
A
15
A
70
W
150
℃
Tstg
Storage Temperature
-55~150
℃
2SD1680
isc website：www.
2SD1680 Datasheet
