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2SD1705 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Good Linearity of hFE Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 6A Complement to Type 2SB1154 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS De

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isc Silicon NPN Power Transistor 2SD1705 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.