Datasheet Details
| Part number | 2SD1705 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 211.56 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD1705-INCHANGE.pdf
|
| Part number | 2SD1705 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 211.56 KB |
| Description | NPN Transistor |
| Datasheet |
2SD1705-INCHANGE.pdf
|
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Good Linearity of hFE Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 6A Complement to Type 2SB1154 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-B
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