2SD1762 - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min.) Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 2A Complement to Type 2SB1185 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency po

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Datasheet Details

Part number	2SD1762
Manufacturer	Inchange Semiconductor
File Size	209.92 KB
Description	NPN Transistor
Datasheet	2SD1762 Datasheet

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 2A ·Complement to Type 2SB1185 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4.5 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1762 isc website：www.iscsemi.