High Power Dissipation
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min.)
Complement to Type 2SB1192
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
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isc Silicon NPN Power Transistor
DESCRIPTION ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min.) ·Complement to Type 2SB1192 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications. ·TV vertical deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
200
V
VCEO Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
1
A
ICM
Collector Current-Peak
Total Power Dissipation @ TC=25℃
PC Total Power Dissipation @ Ta=25℃
TJ
Junction Temperature
2
A
25 W
2
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SD1772
isc website：www.iscsemi.
2SD1772 Datasheet
