Datasheet4U Logo Datasheet4U.com

2SD1773 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min.) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 4A High DC Current Gain : hFE= 1000(Min) @ IC= 4A, VCE= 3V Complement to Type 2SB1193 Minimum Lot-to-Lot variations for robust device performance an

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD1773 Silicon NPN Transistor Panasonic Semiconductor
2SD1773 SILICON POWER TRANSISTOR SavantIC
2SD1770 Silicon NPN Darlington Power Transistor Inchange Semiconductor Company
2SD1771 Silicon NPN Transistor Panasonic Semiconductor
2SD1771A Silicon NPN Transistor Panasonic Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD1772 NPN Transistor
2SD1705 NPN Transistor
2SD1707 NPN Transistor
2SD1710 NPN Transistor
2SD1712 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 4A ·High DC Current Gain : hFE= 1000(Min) @ IC= 4A, VCE= 3V ·Complement to Type 2SB1193 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium speed switching applications.