2SD188 Overview
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=5A ; IB=0.5A VBEsat Base-emitter saturation voltage IC=5A ; IB=0.5A...
