2SD1886C - NPN Transistor

Inchange Semiconductor

General Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Speed Switching High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE M

📥 Download Datasheet

2SD1886C npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD1886C
Manufacturer	Inchange Semiconductor
File Size	212.85 KB
Description	NPN Transistor
Datasheet	2SD1886C Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SD1886C	NPN Triple Diffused Planar Silicon Transistor	Sanyo Semicon Device
2SD1886	NPN Transistor	Sanyo Semiconductor Corporation
2SD1886	SILICON POWER TRANSISTOR	SavantIC
2SD188	Silicon NPN Power Transistor	SavantIC
2SD1880	NPN Triple Diffused Planar Silicon Transistor	Sanyo Semicon Device

Other Datasheets by Inchange Semiconductor

Part Number	Description
2SD1886	NPN Transistor
2SD188	NPN Transistor
2SD1880	NPN Transistor
2SD1881	NPN Transistor
2SD1882	NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Speed Switching ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 8 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 25 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1886C isc website：www.iscsemi.