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2SD2015 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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isc Silicon NPN Darlington Power Transistor 2SD2015 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A ·High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for driver of solenoid, relay and motor, and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.