Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min)
Wide Area of Safe Operation
Complement to Type 2SB1347
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Power amplifier applications
Optimum for the output stage of
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isc Silicon NPN Power Transistor
2SD2029
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SB1347 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications ·Optimum for the output stage of a HiFi audio amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
Collector Power Dissipation @ TC=25℃
PC Collector Power Dissipation @ Ta=25℃
TJ
Junction Temperature
20
A
120 W
3.5
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.
2SD2029 Datasheet
