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2SD2057 - NPN Transistor

General Description

High Voltage, High Speed Wide Area of Safe Operation Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for horizontal deflection output applications.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage, High Speed ·Wide Area of Safe Operation ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCBO Collector-Base Voltage 1500 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 5 A ICM Collector Current-Peak 20 A IB Base Current- Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 4 A 100 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2057 isc website：www.iscsemi.