2SD2057
Key Features
- 0± 0.3 11.0± 0.2 Solder Dip q q q
- 2± 0.5 3.2 2.3 q Incorporating a built-in damper diode Reduction of a parts count and simplification of a circuit are allowed High breakdown voltage with high reliability High-speed switching Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 1500 1500 7 20 5 4 100 3 150 -55 to +150 Unit V V V A A A W ˚C ˚C
- 0± 0.5 15.0± 0.2
- 0± 0.2 3.2 φ3.2± 0.1
- 0± 0.2 1.1± 0.1
- 0± 0.1 0.6± 0.2
- 45± 0.3 10.9± 0.5 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VEBO ICP IC IB PC Tj Tstg 1:Base 2:Collector 3:Emitter TOP-3 Full Pack Package(b) Internal Connection C B E s Electrical Characteristics Parameter Collector cutoff current Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time (L-load) Fall time (L-load) Diode forward voltage (TC=25˚C) Symbol ICBO VEBO hFE VCE(sat) VBE(sat) fT tstg tf VF Conditions VCB = 1000V, IE = 0 VCB = 1500V, IE = 0 IE = 500mA, IC = 0 VCE = 10V, IC = 5A IC = 5A, IB = 1.2A IC = 5A, IB = 1.2A 7 4.5 15 8 V V min typ max 30 300 Unit µA µA V
- 5 2 12 0.8 -2.3 MHz µs µs V VCE = 10V, IC = 1A, f = 0.5MHz IC = 5A, IB1 = 1.2A, IB2 = -1.2A, Lleak = 5µH IC = -6A, IB = 0 1 Power Transistors PC - Ta
