q q q
4.0
High foward current transfer ratio hFE Incorporating a built-in zener diode Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 60±10 60±10 5 2.5 1.6 12 2.0 150.
55 to +150 Unit V V V A A W ˚C ˚C
16.7±0.3
φ3.1±0.1
1.4±0.1
1.3±0.2
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation T.
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Power Transistors
2SD2051
Silicon NPN epitaxial planar type Darlington
For low-frequency amplification
0.7±0.1
10.0±0.2 5.5±0.2 2.7±0.2
4.2±0.2
4.2±0.2
Unit: mm
7.5±0.2
s Features
q q q
4.0
High foward current transfer ratio hFE Incorporating a built-in zener diode Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 60±10 60±10 5 2.5 1.6 12 2.0 150 –55 to +150 Unit V V V A A W ˚C ˚C
16.7±0.3
φ3.1±0.1
1.4±0.1
1.3±0.2
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
14.0±0.5
0.8±0.1
0.5 –0.1
+0.
2SD2051 Datasheet
