Inchange Semiconductor 2SD2051
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD2051 |
|---|---|
| Datasheet | 2SD2051 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High DC Current Gain : hFE= 4000(Min) @IC= 1A●Low Collector Saturation Voltgae- : VCE(sat)= 1.5V(Max.)@ IC= 1A
●Incorporating a built-in zener diode
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●For low-frequency amplificationABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50-70 V VCEO Collector-Emitter Voltage 50-70 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.6 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.5 A 2.0 W 12 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage V(BR)EBO Emitter-Base Bre...