Datasheet Details
| Part number | 2SD2057 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.66 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2057-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD2057 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.66 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2057-INCHANGE.pdf |
|
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·High Voltage, High Speed ·Wide Area of Safe Operation ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCBO Collector-Base Voltage 1500 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 5 A ICM Collector Current-Peak 20 A IB Base Current- Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 4 A 100 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2057 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD2057 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD2057 | Silicon NPN Transistor | Panasonic Semiconductor |
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2SD2057 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
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| 2SD2053 | NPN Transistor |
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| 2SD2058 | NPN Transistor |
| 2SD2059 | NPN Transistor |
| 2SD200 | NPN Transistor |
| 2SD2000 | NPN Transistor |
| 2SD2001 | NPN Transistor |
| 2SD201 | NPN Transistor |