Datasheet Details
| Part number | 2SD2058 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.91 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2058-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD2058 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.91 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2058-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·Collector Power Dissipation : PC= 25 W(Max) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.5 A 25 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD2058 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 0.5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD2058 | Silicon NPN Power Transistors | Savant |
| Part Number | Description |
|---|---|
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| 2SD2053 | NPN Transistor |
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| 2SD2059 | NPN Transistor |
| 2SD200 | NPN Transistor |
| 2SD2000 | NPN Transistor |
| 2SD2001 | NPN Transistor |
| 2SD201 | NPN Transistor |