Inchange Semiconductor 2SD2055
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD2055 |
|---|---|
| Datasheet | 2SD2055 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High DC Current Gain - : hFE =20(Min)@ IC= 4A●Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min)
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 80 VCEO Collector-Emitter Voltage 60 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 10 IB Base Current 6 PC Collector Power Dissipation @ TC=25℃ 40 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.39 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2055ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustai...