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2SD2055 - NPN Transistor

General Description

High DC Current Gain - : hFE =20(Min)@ IC= 4A Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high power audio amplifiers utilizing complementary or qu

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2055 DESCRIPTION ·High DC Current Gain - : hFE =20(Min)@ IC= 4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.