Datasheet Details
| Part number | 2SD2053 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.74 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2053-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD2053 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.74 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2053-INCHANGE.pdf |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SB1362 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 9 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 15 A 100 W 2.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2053 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD2053 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 7A;
IB= 0.7A VBE(on) Base -Emitter On Voltage IC= 7A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD2053 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD2051 | NPN Transistor |
| 2SD2052 | NPN Transistor |
| 2SD2055 | NPN Transistor |
| 2SD2057 | NPN Transistor |
| 2SD2058 | NPN Transistor |
| 2SD2059 | NPN Transistor |
| 2SD200 | NPN Transistor |
| 2SD2000 | NPN Transistor |
| 2SD2001 | NPN Transistor |
| 2SD201 | NPN Transistor |