Datasheet Summary
Power Transistors
Silicon NPN triple diffusion planar type
For high power amplification plementary to 2SB1361
Unit: mm q q q q q
16.2±0.5 12.5 3.5 Solder Dip
Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 150 150 5 15 9 100 3 150
- 55 to +155 Unit V V V A A W ˚C ˚C
0.7 s Features
15.0±0.3 11.0±0.2
5.0±0.2 3.2
21.0±0.5 15.0±0.2
φ3.2±0.1
2.0±0.2
2.0±0.1 0.6±0.2
1.1±0.1 5.45±0.3 10.9±0.5 1 2 3 s...
