Excellent Safe Operating Area
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 100V(Min.)
Low Collector Saturation Voltage
High Switching Speed
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for high power ampl
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD207
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 100V(Min.) ·Low Collector Saturation Voltage·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
10
A
ICP
Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
20
A
150
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
isc website：www.iscsemi.
2SD207 Datasheet
