Datasheet4U Logo Datasheet4U.com

2SD2081 - NPN Transistor

General Description

High DC Current Gain- : hFE= 2000(Min)@ (VCE= 4V, IC= 5A) Large Current Capability Complement to Type 2SB1259 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD2081 Silicon NPN Transistor Sanken electric
2SD2082 Silicon NPN Transistor Sanken electric
2SD2082 SILICON POWER TRANSISTOR SavantIC
2SD2083 Silicon NPN Transistor Sanken electric
2SD2088 Silicon NPN Transistor Toshiba Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD2082 NPN Transistor
2SD2083 NPN Transistor
2SD2089 NPN Transistor
2SD200 NPN Transistor
2SD2000 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 4V, IC= 5A) ·Large Current Capability ·Complement to Type 2SB1259 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Driver for solenoid, motor and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Pulse 15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1 A 30 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD2081 isc website：www.iscsemi.