2SD2083 Overview
hFE= 2000(Min.)@ IC= 12A, VCE= 4V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) ·plement to Type 2SB1383 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for driver of solenoid, motor and general purpose applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD2083 TC=25℃ unless otherwise...
