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2SD2257 - NPN Transistor

General Description

Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1.5A High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V Complement to Type 2SB1495 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching appl

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1.5A ·High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V ·Complement to Type 2SB1495 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications ·Hammer drive, pulse motor drive applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 5 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.3 A 20 W 2.