2SD2271 Silicon NPN Darlington Power Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain- : hFE= 500(Min)@ (VCE= 2V, IC= 5A). High Breakdown Voltage :VCEO(sus)=200V（Min）. Minimum Lot-to-Lot variations for.

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Datasheet Specifications

Part number: 2SD2271
Manufacturer: INCHANGE
File Size: 195.63 KB
Datasheet: 2SD2271-INCHANGE.pdf
Description: Silicon NPN Darlington Power Transistor

Applications

* Motor drive applications
* High current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A ICP Col

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2SD2271 Silicon NPN Darlington Power Transistor INCHANGE

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