Datasheet Details
| Part number | 2SD2271 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.63 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Download | 2SD2271 Download (PDF) |
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| Part number | 2SD2271 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.63 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Download | 2SD2271 Download (PDF) |
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·High DC Current Gain- : hFE= 500(Min)@ (VCE= 2V, IC= 5A) ·High Breakdown Voltage :VCEO(sus)=200V（Min） ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor drive applications ·High current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A ICP Collector Current-Peak 18 A IB Base Current Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1 A 2.0 W 30 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD2271 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD2271 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
L=40mH V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A;
isc Silicon NPN Darlington Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD2271 | Silicon NPN Transistor | Toshiba Semiconductor |
| Part Number | Description |
|---|---|
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| 2SD2251 | NPN Transistor |
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| 2SD2256 | Silicon NPN Darlington Power Transistor |
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