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2SD2275 - NPN Transistor

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Part number 2SD2275
Manufacturer INCHANGE
File Size 200.81 KB
Description NPN Transistor
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) High DC Current Gain- : hFE= 5000( Min.) @(IC= 4A, VCE= 5V) Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 4A, IB= 4mA) Complement to Type 2SB1502 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplification.

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