Datasheet Details
| Part number | 2SD2275 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.81 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2275-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD2275 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.81 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2275-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 4A, VCE= 5V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 4A, IB= 4mA) ·Complement to Type 2SB1502 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 8 A 3.5 W 60 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD2275 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD2275 | Silicon NPN Transistor | Panasonic Semiconductor |
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