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2SD2271 - Silicon NPN Darlington Power Transistor

General Description

High DC Current Gain- : hFE= 500(Min)@ (VCE= 2V, IC= 5A) High Breakdown Voltage :VCEO(sus)=200V（Min） Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor drive applications High current switching applications ABSOLUTE MAXIMUM

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 500(Min)@ (VCE= 2V, IC= 5A) ·High Breakdown Voltage :VCEO(sus)=200V（Min） ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor drive applications ·High current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A ICP Collector Current-Peak 18 A IB Base Current Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1 A 2.0 W 30 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD2271 isc website：www.iscsemi.