High Breakdown Voltage-
: VCBO= 1500V (Min)
Built-in Damper Diode
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for CTV horizontal d
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isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for CTV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
1500
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
5
A
IC(peak) Collector Current-Peak
6
A
IC(surge) Collector Current-Surge
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
16
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD2300
isc website：www.iscsemi.
2SD2300 Datasheet
