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2SD2498 Datasheet Preview

2SD2498 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·Low Saturation Voltage
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Horizontal deflection output for high resolution display,
color TV
·High speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
6
A
ICP
Collector Current- Pulse
12
A
IB
Base Current- Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
3
A
50
W
150
Tstg
Storage Temperature Range
-55~150
2SD2498
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SD2498 Datasheet Preview

2SD2498 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4.0A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4.0A; IB= 0.8A
ICBO
Collector Cutoff Current
VCB= 1500V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V ; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 4A ; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V
COB
Output Capacitance
Switching times
IE= 0 ; VCB= 10V;ftest= 1.0MHz
tstg
Storage Time
tf
Fall Time
ICP= 4A , IB1(end)= 0.8A ;
fH= 15.75kHz
2SD2498
MIN TYP. MAX UNIT
600
V
5.0
V
1.2
V
1.0 mA
10 μA
10
30
5
9
2
MHz
95
pF
10 μs
0.7 μs
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2SD2498
Description NPN Transistor
Maker INCHANGE
Total Page 3 Pages
PDF Download

2SD2498 Datasheet PDF





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