Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max) @IC= 2.0A
Complement to Type 2SB507
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for the out
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isc Silicon NPN Power Transistor
2SD313
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max) @IC= 2.0A ·Complement to Type 2SB507 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for the output stage of 15W to 25W AF power
amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3.0
A
ICM
Collector Current-Peak
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
8.0
A
1.
2SD313 Datasheet
