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2SD313 Datasheet

Manufacturer: Inchange Semiconductor
2SD313 datasheet preview

2SD313 Details

Part number 2SD313
Datasheet 2SD313-INCHANGE.pdf
File Size 209.82 KB
Manufacturer Inchange Semiconductor
Description NPN Transistor
2SD313 page 2

2SD313 Overview

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 2.0A ·plement to Type 2SB507 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier.

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