2SD315 - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 2.0A Complement to Type 2SB509 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF power

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2SD315 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD315
Manufacturer	Inchange Semiconductor
File Size	205.45 KB
Description	NPN Transistor
Datasheet	2SD315 Datasheet

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Other Datasheets by Inchange Semiconductor

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2SD310	NPN Transistor
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2SD316	NPN Transistor

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isc Silicon NPN Power Transistor 2SD315 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 2.0A ·Complement to Type 2SB509 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 35 W 150 ℃ Tstg Storage Temperature Range -40~150 ℃ isc website：www.iscsemi.