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2SD345 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 55V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max) @IC= 2.0A Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and gen

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD345 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 55V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max) @IC= 2.0A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.