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2SD365 - NPN Transistor

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Part number 2SD365
Manufacturer INCHANGE
File Size 206.19 KB
Description NPN Transistor
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 2.0A Complement to Type 2SB512 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications.

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