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2SD365 NPN Transistor

2SD365 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD365 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Low Collector Saturation Voltage- : VCE(sat)= 1. Complement.

2SD365 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissip

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Datasheet Details

Part number
2SD365
Manufacturer
INCHANGE
File Size
206.19 KB
Datasheet
2SD365-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD365-like datasheet