Datasheet4U Logo Datasheet4U.com

2SD460 - NPN Transistor

📥 Download Datasheet

Preview of 2SD460 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number 2SD460
Manufacturer INCHANGE
File Size 185.98 KB
Description NPN Transistor
Datasheet download datasheet 2SD460-INCHANGE.pdf

2SD460 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) High DC Current Gain : hFE= 1500(Min) @IC= 5A Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5

📁 2SD460 Similar Datasheet

  • 2SD467 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD468 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD469 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • 2SD400 - PNP / NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SD401 - Silicon Transistor (Wing Shing Computer Components)
  • 2SD401A - Power Transistor (Mospec Semiconductor)
  • 2SD402 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD402A - Power Transistor (NEC)
Other Datasheets by INCHANGE
Published: |