Datasheet Details
| Part number | 2SD463 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.17 KB |
| Description | NPN Transistor |
| Datasheet | 2SD463-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD463 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.17 KB |
| Description | NPN Transistor |
| Datasheet | 2SD463-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain : hFE= 3000(Min) @IC= 5A ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO IC ICP IB PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range 5 V 7 A 12 A 0.3 A 80 W 150 ℃ -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD463 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A;
| Part Number | Description |
|---|---|
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| 2SD470 | NPN Transistor |