Datasheet Details
| Part number | 2SD460 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.98 KB |
| Description | NPN Transistor |
| Datasheet | 2SD460-INCHANGE.pdf |
|
|
Overview: INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD460 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.98 KB |
| Description | NPN Transistor |
| Datasheet | 2SD460-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 5A ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICP Collector Current-Peak IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 12 A 0.3 A 2 W 50 150 ℃ -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD460 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A;
| Part Number | Description |
|---|---|
| 2SD463 | NPN Transistor |
| 2SD402 | NPN Transistor |
| 2SD414 | NPN Transistor |
| 2SD424 | NPN Transistor |
| 2SD425 | NPN Transistor |
| 2SD426 | NPN Transistor |
| 2SD437 | NPN Transistor |
| 2SD45 | NPN Transistor |
| 2SD459 | NPN Transistor |
| 2SD470 | NPN Transistor |