Datasheet4U Logo Datasheet4U.com

2SD460 - NPN Transistor

Product Overview

📥 Download Datasheet

Datasheet preview – 2SD460

Datasheet Details

Part number 2SD460
Manufacturer INCHANGE
File Size 185.98 KB
Description NPN Transistor
Datasheet download datasheet 2SD460 Datasheet
Additional preview pages of the 2SD460 datasheet.

Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) High DC Current Gain : hFE= 1500(Min) @IC= 5A Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5

📁 Similar Datasheet

  • 2SD467 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD468 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD469 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • 2SD400 - PNP / NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SD401 - Silicon Transistor (Wing Shing Computer Components)
  • 2SD401A - Power Transistor (Mospec Semiconductor)
  • 2SD402 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD402A - Power Transistor (NEC)
Other Datasheets by INCHANGE
Published: |