Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
High DC Current Gain
: hFE= 3000(Min) @IC= 5A
Low Saturation Voltage
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for general-pur
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD463
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·High DC Current Gain
: hFE= 3000(Min) @IC= 5A ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO IC ICP IB PC TJ Tstg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature
Storage Temperature Range
5
V
7
A
12
A
0.
2SD463 Datasheet
